منابع مشابه
High-speed maskless nanolithography with visible light based on photothermal localization
High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (λ = 405 nm), and on a large sample disk of diameter 120 mm. The normal width of the written features measures 46 ± 5 nm, about 1/12 of the diffraction allowed smallest light spot, and the lithography speed reaches 6 ~ 8 m/s, t...
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The commercialization of nanoscale devices requires the development of high-throughput nanofabrication technologies that allow frequent design changes. Maskless nanolithography, including electron-beam and scanning-probe lithography, offers the desired flexibility but is limited by low throughput. Here, we report a new low-cost, high-throughput approach to maskless nanolithography that uses an ...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2008
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(08)70113-5